Title :
A device model of nano-scale transistor for future CAD
Author :
Nishizawa, Hideyuki ; Shimizu, Tatsuo ; Itoh, Satoshi
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, we propose a device model of silicon nano-scale wire transistor which includes the effects of elastic and inelastic scattering processes in carrier transport. Additionally, a possibility of silicon electrode for the wire transistor will be discussed.
Keywords :
electrodes; elemental semiconductors; nanoelectronics; nanowires; semiconductor device models; semiconductor process modelling; silicon; technology CAD (electronics); transistors; CAD; Si; carrier transport; device model; inelastic scattering process; silicon electrode; silicon nanoscale wire transistor; Electrodes; Energy dissipation; Nanoscale devices; Silicon; Solid modeling; Transistors; Wire; device model; nano-scale wire transistor; quantum transport;
Conference_Titel :
CAD Systems in Microelectronics (CADSM), 2011 11th International Conference The Experience of Designing and Application of
Conference_Location :
Polyana-Svalyava
Print_ISBN :
978-1-4577-0042-2
