DocumentCode
54390
Title
Normally-off Logic Based on Resistive Switches—Part I: Logic Gates
Author
Balatti, Simone ; Ambrogio, Stefano ; Ielmini, Daniele
Author_Institution
Dipt. di Elettron., Politec. di Milano, Milan, Italy
Volume
62
Issue
6
fYear
2015
fDate
Jun-15
Firstpage
1831
Lastpage
1838
Abstract
To extend the scaling of digital integrated circuits, beyond-CMOS approaches based on advanced materials and novel switching concepts are strongly needed. Among these approaches, the resistive switching random access memory (RRAM) allows for fast and nonvolatile switching at scalable power consumption. This work presents functionally complete logic gates based on RRAM technology. Logic computation is obtained through conditional switching in RRAM circuits with serially connected switches. AND, implication, NOT, and bit transfer operations are demonstrated, each using a single clock pulse, while other functions (e.g., OR and XOR) are achieved in multiple steps. The results support RRAM logic for normally-off digital circuits with extremely high density.
Keywords
CMOS digital integrated circuits; digital integrated circuits; logic gates; resistive RAM; AND; CMOS; NOT; RRAM technology; digital integrated circuits; logic gates; nonvolatile switching; normally-off logic; resistive switches; resistive switching random access memory; Clocks; Electrodes; Integrated circuits; Logic gates; Resistance; Switches; Voltage measurement; Logic circuits; logic computing; logic gates; resistive switching random access memory (RRAM); resistive switching random access memory (RRAM).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2422999
Filename
7102724
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