• DocumentCode
    54390
  • Title

    Normally-off Logic Based on Resistive Switches—Part I: Logic Gates

  • Author

    Balatti, Simone ; Ambrogio, Stefano ; Ielmini, Daniele

  • Author_Institution
    Dipt. di Elettron., Politec. di Milano, Milan, Italy
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    1831
  • Lastpage
    1838
  • Abstract
    To extend the scaling of digital integrated circuits, beyond-CMOS approaches based on advanced materials and novel switching concepts are strongly needed. Among these approaches, the resistive switching random access memory (RRAM) allows for fast and nonvolatile switching at scalable power consumption. This work presents functionally complete logic gates based on RRAM technology. Logic computation is obtained through conditional switching in RRAM circuits with serially connected switches. AND, implication, NOT, and bit transfer operations are demonstrated, each using a single clock pulse, while other functions (e.g., OR and XOR) are achieved in multiple steps. The results support RRAM logic for normally-off digital circuits with extremely high density.
  • Keywords
    CMOS digital integrated circuits; digital integrated circuits; logic gates; resistive RAM; AND; CMOS; NOT; RRAM technology; digital integrated circuits; logic gates; nonvolatile switching; normally-off logic; resistive switches; resistive switching random access memory; Clocks; Electrodes; Integrated circuits; Logic gates; Resistance; Switches; Voltage measurement; Logic circuits; logic computing; logic gates; resistive switching random access memory (RRAM); resistive switching random access memory (RRAM).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2422999
  • Filename
    7102724