DocumentCode :
54390
Title :
Normally-off Logic Based on Resistive Switches—Part I: Logic Gates
Author :
Balatti, Simone ; Ambrogio, Stefano ; Ielmini, Daniele
Author_Institution :
Dipt. di Elettron., Politec. di Milano, Milan, Italy
Volume :
62
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
1831
Lastpage :
1838
Abstract :
To extend the scaling of digital integrated circuits, beyond-CMOS approaches based on advanced materials and novel switching concepts are strongly needed. Among these approaches, the resistive switching random access memory (RRAM) allows for fast and nonvolatile switching at scalable power consumption. This work presents functionally complete logic gates based on RRAM technology. Logic computation is obtained through conditional switching in RRAM circuits with serially connected switches. AND, implication, NOT, and bit transfer operations are demonstrated, each using a single clock pulse, while other functions (e.g., OR and XOR) are achieved in multiple steps. The results support RRAM logic for normally-off digital circuits with extremely high density.
Keywords :
CMOS digital integrated circuits; digital integrated circuits; logic gates; resistive RAM; AND; CMOS; NOT; RRAM technology; digital integrated circuits; logic gates; nonvolatile switching; normally-off logic; resistive switches; resistive switching random access memory; Clocks; Electrodes; Integrated circuits; Logic gates; Resistance; Switches; Voltage measurement; Logic circuits; logic computing; logic gates; resistive switching random access memory (RRAM); resistive switching random access memory (RRAM).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2422999
Filename :
7102724
Link To Document :
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