DocumentCode
544251
Title
Bist ability in molecular chemistry: A step towards built in memory-devices
Author
Kahn, O. ; Jay, C. ; Bolvin, H. ; Krober, J.
Author_Institution
Lab. de Chim. Inorg., Univ. de Paris Sud, Orsay, France
Volume
1
fYear
1992
fDate
Oct. 29 1992-Nov. 1 1992
Firstpage
194
Lastpage
195
Abstract
Spin Transition compounds exhibit an outstanding bistability (magnetic and optical), the makes them usable in memory devices. The origin of the hysteresis is under investigation; the macroscopic cooperative effect has already been well documented, but the phenomenon could also occur at the molecular scale, so that a model is proposed to take that point into account.
Keywords
magnetic hysteresis; magnetic storage; molecular electronics; optical bistability; bistability; built in memory devices; hysteresis; macroscopic cooperative effect; magnetic stability; molecular chemistry; optical stability; spin transition compounds; Hysteresis; Magnetic hysteresis;
fLanguage
English
Publisher
ieee
Conference_Titel
Engineering in Medicine and Biology Society, 1992 14th Annual International Conference of the IEEE
Conference_Location
Paris
Print_ISBN
0-7803-0785-2
Electronic_ISBN
0-7803-0816-6
Type
conf
DOI
10.1109/IEMBS.1992.5760922
Filename
5760922
Link To Document