Model of self-heating effect for undoped polycrystalline silicon thin film transistors

Author

Wu, Qiong ; Yao, Ruohe ; He, Hongyu

Author_Institution

Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China

Volume

3

fYear

2011

fDate

11-13 March 2011

Firstpage

371

Lastpage

374

Abstract

Analytical drain current expressions with self-heating effect are presented for undoped polycrystalline thin film transistors (poly-Si TFTs). Temperature dependence of threshold voltage and effective mobility is involved. The expressions are derived on the basis of a first order Taylor expansion and continuous from linear regime to saturation regime. The validity of this model is verified by available experimental data and a good agreement is obtained.

Keywords

elemental semiconductors; semiconductor device models; silicon; thin film transistors; Si; effective mobility; first order Taylor expansion; self-heating effect; temperature dependence; threshold voltage; undoped polycrystalline silicon thin film transistors; Analytical models; Integrated circuit modeling; Logic gates; Silicon; Temperature dependence; Thin film transistors; Threshold voltage; effective mobility; polycrystalline silicon (poly-Si); self-heating effect; thin film transistors (TFTs);

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Research and Development (ICCRD), 2011 3rd International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-61284-839-6

Type

conf

DOI

10.1109/ICCRD.2011.5764216

Filename

5764216