Title :
A predistortion linearizer for Ka-band power amplifier in integrated fin-line technique
Author :
Cheng, Bin ; Tian, Ye ; Mao, Fan ; Li, Chenfei
Author_Institution :
Sichuan Inst. of Piezoelectr. & Acousto-Opt. Technol., Chongqing, China
Abstract :
This paper presents a millimeter-wave predistortion linearizer, which used a GaAs Schottky diode with a bias feed resistance in integrated fin-line technique. The predistortion linearizer with a single parallel diode is capable of providing up to 4.5dB gain compensation and 20 degree phase compensation. Combining with the integrated fin-line structures, the linearizer has lower insertion loss, and it is convenient to fabricate especially at millimeter-wave lengths. Experimental results show that the method applied in fin-line is reliable and effective.
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; millimetre wave amplifiers; power amplifiers; GaAs; GaAs Schottky diode; Ka-band power amplifier; bias feed resistance; gain compensation; insertion loss; integrated fin-line technique; millimeter-wave predistortion linearizer; phase compensation; single parallel diode; Equivalent circuits; Gain; Millimeter wave technology; Predistortion; Resistance; Schottky diodes;
Conference_Titel :
Microwave Conference Proceedings (CJMW), 2011 China-Japan Joint
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4577-0625-7
Electronic_ISBN :
978-7-308-08555-7