DocumentCode :
545767
Title :
A 2.4 GHz and 5.8 GHz tunable low-noise amplifier using PIN diode
Author :
Hou, Dezhou ; Hong, Wei ; Wu, Ke
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
fYear :
2011
fDate :
20-22 April 2011
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, a tunable low-noise amplifier (LNA) is developed. The operation bands of the LNA can be switched between 2.4 GHz and 5.8 GHz by controlling a PIN diode in the output matching network. At the forward bias state of the PIN diode, the LNA operates at 2.4 GHz, the measured gain is 16 dB and the noise figure is below 0.6 dB within a bandwidth of 100 MHz. At the reverse bias state of the PIN diode, the LNA works at 5.8 GHz, the measured gain is 9.7 dB and the noise figure is below 1.7 dB within a bandwidth of 200 MHz. Compared with the wideband LNA covering 2.4GHz and 5.8GHz bands, efficient improvement in gain and noise figure is observed.
Keywords :
low noise amplifiers; microwave amplifiers; p-i-n diodes; LNA; PIN diode; bandwidth 100 MHz; bandwidth 200 MHz; frequency 2.4 GHz; frequency 5.8 GHz; gain 16 dB; gain 9.7 dB; tunable low-noise amplifier; Frequency measurement; Gain; Gain measurement; Impedance matching; Noise figure; PIN photodiodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (CJMW), 2011 China-Japan Joint
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4577-0625-7
Electronic_ISBN :
978-7-308-08555-7
Type :
conf
Filename :
5774025
Link To Document :
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