• DocumentCode
    545768
  • Title

    An investigation into the effect of the bias line on the insertion loss of RF-MEMS tunable filter

  • Author

    Tu, Cheng ; Bao, Jingfu ; Du, Yijia

  • Author_Institution
    Dept. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2011
  • fDate
    20-22 April 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Explicit design formulae to describe the effect of the bias line on the insertion loss of RF-MEMS tunable filter are presented at first in this paper. Afterwards, a five-order RF-MEMS tunable filter using five identical MEMS capacitance networks is designed and simulated to justify the proposed formulae. From the design example, it is seen that the insertion loss of the filter increased from -7dB to -5dB when the resistance of the bias line varies from 1kΩ2 to 8kΩ2. Finally, the bias line with meander-line shape is introduced in this paper to increase the resistance of the bias line.
  • Keywords
    equivalent circuits; radiofrequency filters; switched capacitor filters; MEMS capacitance networks; RF-MEMS tunable filter; bias line; insertion loss; meander-line shape; Band pass filters; Capacitance; Capacitors; Insertion loss; Micromechanical devices; Resistance; Resonator filters; RF-MEMS; bias line; capacitance network; insertion loss; tunable filter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (CJMW), 2011 China-Japan Joint
  • Conference_Location
    Hangzhou
  • Print_ISBN
    978-1-4577-0625-7
  • Electronic_ISBN
    978-7-308-08555-7
  • Type

    conf

  • Filename
    5774026