DocumentCode :
545768
Title :
An investigation into the effect of the bias line on the insertion loss of RF-MEMS tunable filter
Author :
Tu, Cheng ; Bao, Jingfu ; Du, Yijia
Author_Institution :
Dept. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2011
fDate :
20-22 April 2011
Firstpage :
1
Lastpage :
4
Abstract :
Explicit design formulae to describe the effect of the bias line on the insertion loss of RF-MEMS tunable filter are presented at first in this paper. Afterwards, a five-order RF-MEMS tunable filter using five identical MEMS capacitance networks is designed and simulated to justify the proposed formulae. From the design example, it is seen that the insertion loss of the filter increased from -7dB to -5dB when the resistance of the bias line varies from 1kΩ2 to 8kΩ2. Finally, the bias line with meander-line shape is introduced in this paper to increase the resistance of the bias line.
Keywords :
equivalent circuits; radiofrequency filters; switched capacitor filters; MEMS capacitance networks; RF-MEMS tunable filter; bias line; insertion loss; meander-line shape; Band pass filters; Capacitance; Capacitors; Insertion loss; Micromechanical devices; Resistance; Resonator filters; RF-MEMS; bias line; capacitance network; insertion loss; tunable filter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (CJMW), 2011 China-Japan Joint
Conference_Location :
Hangzhou
Print_ISBN :
978-1-4577-0625-7
Electronic_ISBN :
978-7-308-08555-7
Type :
conf
Filename :
5774026
Link To Document :
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