Qualitative model for nanostructures formation in semiconductor material along femtosecond laser beam direction

Author

Makin, V.S. ; Silantjeva, I.A. ; Makin, R.S.

Author_Institution

Res. Inst. for Complex Testing of Opto-Electron. Devices, Sosnovy Bor, Russia

fYear

2010

fDate

8-11 June 2010

Firstpage

123

Lastpage

127

Abstract

The experimental results causing the trench of sub-wavelength nanostructures formation in semiconductors 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their interference with opposite wave vectors directions following the semiconductors cylindrical rode metallization.

Keywords

high-speed optical techniques; laser beam effects; metallisation; nanostructured materials; polaritons; silicon compounds; surface plasmons; wide band gap semiconductors; SiC; cylindrical surface plasmon polaritons; femtosecond laser beam radiation direction; incident radiation interference; laser-induced material damage; nanostructures formation; polariton model; qualitative model; semiconductor 4H-SiC surface; semiconductors cylindrical rode metallization; wave vectors; Laser beams; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Days on Diffraction (DD), 2010

Conference_Location

St. Petersburg

Print_ISBN

978-1-4577-0244-0

Type

conf

Filename

5775653