Title :
Qualitative model for nanostructures formation in semiconductor material along femtosecond laser beam direction
Author :
Makin, V.S. ; Silantjeva, I.A. ; Makin, R.S.
Author_Institution :
Res. Inst. for Complex Testing of Opto-Electron. Devices, Sosnovy Bor, Russia
Abstract :
The experimental results causing the trench of sub-wavelength nanostructures formation in semiconductors 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their interference with opposite wave vectors directions following the semiconductors cylindrical rode metallization.
Keywords :
high-speed optical techniques; laser beam effects; metallisation; nanostructured materials; polaritons; silicon compounds; surface plasmons; wide band gap semiconductors; SiC; cylindrical surface plasmon polaritons; femtosecond laser beam radiation direction; incident radiation interference; laser-induced material damage; nanostructures formation; polariton model; qualitative model; semiconductor 4H-SiC surface; semiconductors cylindrical rode metallization; wave vectors; Laser beams; Semiconductor lasers;
Conference_Titel :
Days on Diffraction (DD), 2010
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4577-0244-0
