Dynamic tuning of electromagnetic bandgap

Author

Thalakotuna, D.N.P. ; Matekovits, L. ; Esselle, K.P. ; Heimlich, M.

Author_Institution

Dept. of Electron. Eng., Macquarie Univ., Sydney, NSW, Australia

fYear

2011

fDate

11-15 April 2011

Firstpage

1065

Lastpage

1067

Abstract

Dynamically changing the position and width of the electromagnetic band gap of a periodic microwave structure is investigated. The one-dimensional structure consists of twenty four unit cells. It has two dielectric layers: a relatively thick Alumina bottom layer and a thin Polymide top layer, with a thickness ratio of 25:2. There is a microstrip on the top surface. Metal patches, sandwiched between the two layers, are selectively short circuited to the ground plane on the bottom surface, using vias and FET switches, to change the bandgap and hence the cut-off characteristics of the microwave structure. The results obtained for different switching patterns indicate that this structure can be used in filtering and sensing applications in 2.9 GHz - 3.1 GHz range.

Keywords

UHF field effect transistors; dielectric materials; microstrip lines; microwave field effect transistors; microwave switches; periodic structures; photonic band gap; polymers; Al₂O₃; FET switches; dielectric layers; electromagnetic bandgap dynamic tuning; frequency 2.9 GHz to 3.1 GHz; ground plane; metal patches; microstrip circuit; microstrip line; one-dimensional structure; periodic microwave structure; switching patterns; thick alumina bottom layer; thin polymide top layer; FETs; Microstrip; Microwave circuits; Microwave filters; Photonic band gap; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (EUCAP), Proceedings of the 5th European Conference on

Conference_Location

Rome

Print_ISBN

978-1-4577-0250-1

Type

conf

Filename

5781688