DocumentCode :
546035
Title :
Low loss Goubau Line on high-resitivity silicon in the 57–64 GHz band.
Author :
Emond, J. ; Grzeskowiak, M. ; Lissorgues, G. ; Protat, S. ; Deshours, F. ; Richalot, E. ; Picon, O.
Author_Institution :
ESYCOM, Univ. Paris-Est, Marne-la-Vallée, France
fYear :
2011
fDate :
11-15 April 2011
Firstpage :
1459
Lastpage :
1462
Abstract :
Planar Goubau Line (PGL) structures on high resistivity silicon are simulated and measured in the 57-64GHz frequency band. It is shown that the increase of the substrate thickness permits to adapt this line, used at THz frequencies, to this frequency band. Very low losses are attained with a measured average attenuation of 0.064dB/mm on the whole band. Another advantage of the PGL consists in its very simple technological process, as just one level of metallization is necessary. A transition between the PGL and a coplanar waveguide is designed in order to perform on-wafer measurements, and very good agreement is obtained with simulation results for the attenuation of PGL.
Keywords :
coplanar waveguides; metallisation; transmission line theory; PGL structures; Si; coplanar waveguide; frequency 57 GHz to 64 GHz; high-resitivity silicon substrate; on-wafer measurements; planar Goubau line structures; Attenuation; Dielectric losses; Frequency measurement; Permittivity; Silicon; Strips; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation (EUCAP), Proceedings of the 5th European Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4577-0250-1
Type :
conf
Filename :
5781785
Link To Document :
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