Title :
High power short pulse generation at high repetition rate from InGaN violet laser diodes
Author :
Olle, V.F. ; Wonfor, A. ; Vasil´ev, P.P. ; Penty, R.V. ; White, I.H.
Author_Institution :
Eng. Dept., Univ. of Cambridge, Cambridge, UK
Abstract :
The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pulse generation; semiconductor lasers; wide band gap semiconductors; InGaN; gain-switched violet laser diode; high power short pulse generation; power 0.74 W; pulse width dependence; repetition rate; time 22 ps; Optical amplifiers; Optical fibers; Optical pulse generation; Radio frequency; Semiconductor lasers; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
