Title :
Design of three-terminal GaN light emitting HBT for free space communication
Author :
Deng, Shengling ; Huang, Z. Rena
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
This abstract presents design and simulation results of a GaN-based multi-quantum well (MQW) heterojunction transistor (HBT) LED. The combination of the narrow base and collector terminal allows a very fast turn-off delay in the device.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; light emitting diodes; wide band gap semiconductors; GaN; collector terminal; free space communication; multiquantum well heterojunction transistor LED; narrow base; three-terminal light emitting HBT; turn-off delay; Delay; Gallium nitride; Heterojunction bipolar transistors; Integrated optics; Light emitting diodes; Lighting; Optical pulses;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
