DocumentCode
546976
Title
Design of three-terminal GaN light emitting HBT for free space communication
Author
Deng, Shengling ; Huang, Z. Rena
Author_Institution
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
This abstract presents design and simulation results of a GaN-based multi-quantum well (MQW) heterojunction transistor (HBT) LED. The combination of the narrow base and collector terminal allows a very fast turn-off delay in the device.
Keywords
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; light emitting diodes; wide band gap semiconductors; GaN; collector terminal; free space communication; multiquantum well heterojunction transistor LED; narrow base; three-terminal light emitting HBT; turn-off delay; Delay; Gallium nitride; Heterojunction bipolar transistors; Integrated optics; Light emitting diodes; Lighting; Optical pulses;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5951229
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