DocumentCode :
546978
Title :
Direct-bandgap germanium active layers pumped above transparency based on tensilely strained nanomembranes
Author :
Boztug, C. ; Chen, F. ; Sanchez-Perez, J.R. ; Sudradjat, F.F. ; Paskiewicz, D.M. ; Jacobson, R.B. ; Lagally, M.G. ; Paiella, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We show that mechanically stressed nanomembranes can be used to introduce sufficient tensile strain in Ge to transform it into a direct-bandgap, efficient light-emitting material that can support population inversion and thus provide optical gain.
Keywords :
germanium; nanophotonics; photoluminescence; photonic band gap; transparency; direct bandgap germanium active layers; light emitting material; mechanically stressed nanomembranes; population inversion; tensilely strained nanomembranes; Materials; Optical pumping; Photonic band gap; Photonics; Strain measurement; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5951241
Link To Document :
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