Design of a new mm-Wave low power LNA in 0.18 μm CMOS technology

A new low power 33 GHz low noise amplifier (LNA) is proposed in a 0.18μm CMOS technology. It is composed of a single-stage cascode topology consisting of two Common-Gate (CG) amplifiers which provides gain requirements in high frequencies with very low power dissipation. The designed LNA achieves a power gain of 12 dB, IIP3 of −1dBm, and noise figure from 2.96–3.86 dB over the 3dB bandwidth from 3036GHz frequency range. This LNA consumes 7.6 mW from a 1.8-V power supply.