Electric field effects on multiple quantum wells slow light device

Author

Kojori, Hossein Shokri ; Kaatuzian, Hassan ; Mallah, Abdolber

Author_Institution

Dept. of Electr. Eng., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2011

fDate

17-19 May 2011

Firstpage

1

Lastpage

4

Abstract

This paper investigates the effect of applied electric field on frequency center, bandwidth and slow down factor of an slow light device. In this way, we consider the shift of exciton energy levels in quantum wells. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical slow light device shows that applied electric field can tune the frequency and time domain properties of an optical slow light device. Simulation shows that electric field could shift the limited gigahertz bandwidth of this device up to 1 THz. These achievements are useful in optical nonlinearity enhancement and all-optical signal processing applications.

Keywords

III-V semiconductors; aluminium compounds; electric field effects; gallium arsenide; quantum optics; quantum well devices; semiconductor quantum wells; slow light; GaAs-AlGaAs; all-optical signal processing application; electric field effect; exciton energy level shift; frequency domain property; multiple quantum well optical slow light device; optical nonlinearity enhancement; time domain property; Absorption; Electric fields; Equations; Excitons; Optical buffering; Resonant frequency; Slow light; Slow light; electric field; exciton; semiconductor Heterostructure;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2011 19th Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4577-0730-8

Electronic_ISBN

978-964-463-428-4

Type

conf

Filename

5955598