Title :
FDLTD method for the physical simulation of microwave FET transistor
Author :
Mirzavand, Rashid ; Abdipour, Abdolali ; Moradi, Gholamreza ; Movahhedi, Masoud
Author_Institution :
Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
This paper describes an new application of weighted Laguerre polynomial functions to produce a unconditionally stable Finite-Difference Laguerre-Time-domain (FDLTD) scheme for simulation of the Drift-Diffusion Model (DDM) of microwave active devices. The unconditionally stability of FDLTD method leads to a significant reduction in the simulation time. For example, when 100 weighted Laguerre polynomial functions is used, FDLTD is 5 times faster than conventional FDTD method while they have the same degree of accuracy.
Keywords :
finite difference time-domain analysis; microwave field effect transistors; polynomial approximation; drift-diffusion model; finite-difference Laguerre-time-domain scheme; microwave FET transistor; microwave active devices; physical simulation; weighted Lagnerre polynomial functions; Finite difference methods; Mathematical model; Microwave transistors; Polynomials; Time domain analysis; Transistors; Drift-Diffusion Model; Microwave FET Transistor; Semiconductor Device; finite-difference Laguerre time-domain (FDLTD);
Conference_Titel :
Electrical Engineering (ICEE), 2011 19th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4577-0730-8
Electronic_ISBN :
978-964-463-428-4
