FDLTD method for the physical simulation of microwave FET transistor

Author

Mirzavand, Rashid ; Abdipour, Abdolali ; Moradi, Gholamreza ; Movahhedi, Masoud

Author_Institution

Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2011

fDate

17-19 May 2011

Firstpage

1

Lastpage

4

Abstract

This paper describes an new application of weighted Laguerre polynomial functions to produce a unconditionally stable Finite-Difference Laguerre-Time-domain (FDLTD) scheme for simulation of the Drift-Diffusion Model (DDM) of microwave active devices. The unconditionally stability of FDLTD method leads to a significant reduction in the simulation time. For example, when 100 weighted Laguerre polynomial functions is used, FDLTD is 5 times faster than conventional FDTD method while they have the same degree of accuracy.

Keywords

finite difference time-domain analysis; microwave field effect transistors; polynomial approximation; drift-diffusion model; finite-difference Laguerre-time-domain scheme; microwave FET transistor; microwave active devices; physical simulation; weighted Lagnerre polynomial functions; Finite difference methods; Mathematical model; Microwave transistors; Polynomials; Time domain analysis; Transistors; Drift-Diffusion Model; Microwave FET Transistor; Semiconductor Device; finite-difference Laguerre time-domain (FDLTD);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2011 19th Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4577-0730-8

Electronic_ISBN

978-964-463-428-4

Type

conf

Filename

5955656