Analysis of different hot carrier effects on self-assembled InAs/GaAs QDIP dynamic response using circuit model

Author

Mir, Ali ; Ahmadi, Vahid

Author_Institution

Lorestan Univ., Iran

fYear

2011

fDate

17-19 May 2011

Firstpage

1

Lastpage

4

Abstract

In this paper, based on the dynamic behavior of the self-assembled InAs/GaAs quantum dot (QD) infrared photodetectors (QDIPs), we present a set of rate equations. These rate equations are used to circuit modeling for the dynamic simulation of QDIP. By using the presented circuit model, effects of carrier dynamics on QDIP investigated. The effect of relaxation times on the frequency response and transient analysis of the self assembled QDIP, like excited state and wetting layer to ground state are studied. About 100 GHz is the predicted 3-dB cut off frequency for the evaluated InAs/GaAs QDIP.

Keywords

frequency response; gallium arsenide; hot carriers; indium compounds; photodetectors; transient analysis; InAs-GaAs; carrier dynamics; circuit modeling; frequency response; hot carrier effects; rate equations; relaxation times; self-assembled quantum dot infrared photodetectors; transient analysis; Equations; Frequency response; Gallium arsenide; Integrated circuit modeling; Mathematical model; Quantum dots; Stationary state; Circuit model; Frequency response; QDIP; Relaxation process;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2011 19th Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4577-0730-8

Electronic_ISBN

978-964-463-428-4

Type

conf

Filename

5955693