• DocumentCode
    547826
  • Title

    Optimization of bulk GaAs Substrate removed electrooptic modulator using the Finite Element Method

  • Author

    Vahidi, Habib ; Abedi, Kambiz

  • Author_Institution
    Dept. of Electr. Eng., Shahid Beheshti Univ., Tehran, Iran
  • fYear
    2011
  • fDate
    17-19 May 2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this paper we have proposed a new structure for bulk GaAs Substrate removed electrooptic modulators. This new structure has been optimized by using the Finite Element Method to achieve a maximum matching between microwave and optical waves, half-wave voltage length product, VπL as low as 5 V-cm and electrical bandwidth as high as 220 GHz.
  • Keywords
    III-V semiconductors; electro-optical devices; electro-optical effects; finite element analysis; gallium arsenide; optical modulation; optimisation; GaAs; bulk substrate; electrooptic modulator; finite element method; frequency 220 GHz; half-wave voltage; microwave; optical wave; optimization; Electrooptic modulators; Microwave theory and techniques; Optical refraction; Optical variables control; Substrates; Electrooptic coefficient; Substrate removed; semiconductor electrooptic modulators; the Finite Element Method; travelling wave;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2011 19th Iranian Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    978-1-4577-0730-8
  • Electronic_ISBN
    978-964-463-428-4
  • Type

    conf

  • Filename
    5955715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=547826