DocumentCode
547904
Title
Design of a new mm-Wave low power LNA in 0.18 μm CMOS technology
Author
Seiedhosseinzadeh, N. ; Nabavi, A. ; Seyedhosseinzadeh, B. Hoda
Author_Institution
Fac. of Electr. & Comput. Eng., Tarbiat Modares Univ., Tehran, Iran
fYear
2011
fDate
17-19 May 2011
Firstpage
1
Lastpage
1
Abstract
A new low power 33 GHz low noise amplifier (LNA) is proposed in a 0.18 μm CMOS technology. It is composed of a single-stage cascode topology consisting of two Common-Gate (CG) amplifiers which provides gain requirements in high frequencies with very low power dissipation. The designed LNA achieves a power gain of 12 dB, IIP3 of -1dBm, and noise figure from 2.96-3.86 dB over the 3 dB bandwidth from 30-36 GHz frequency range. This LNA consumes 7.6 mW from a 1.8-V power supply.
Keywords
CMOS analogue integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; CMOS technology; common-gate amplifiers; frequency 30 GHz to 36 GHz; gain 12 dB; low power dissipation; mm-wave low power LNA; noise figure 2.96 dB to 3.86 dB; power 7.6 mW; single-stage cascode topology; size 0.18 mum; voltage 1.8 V; CMOS; low noise amplifier; millimetre wave(mm-Wave);
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2011 19th Iranian Conference on
Conference_Location
Tehran
Print_ISBN
978-1-4577-0730-8
Type
conf
Filename
5955794
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