Investigation of double recessed gate SiC MESFETs with different recessed lengths

This paper compares the Double Recessed Gate (DRG) Silicon carbide (SiC) based metal semiconductor field effect transistors (MESFETs) with different double recessed gate lengths (L_drg). We investigate the device performance focusing on breakdown voltage, DC trans-conductance, threshold voltage, short channel effect, drain current, DC output conductance, and gate capacitance with two-dimensional and two-carrier device simulations. Our simulation results demonstrate that with increasing the L_drg in the DRG structure, the saturated drain current, short channel effects and the DC output conductance are reduced and the threshold voltage has positive shift. Increasing the L_drg in the drain side reduces the gate capacitance and increases the breakdown voltage. Also, increasing the L_drg in the source side increases the DC trans-conductance.