• DocumentCode
    54843
  • Title

    Channel Hot Carrier Degradation Mechanism in Long/Short Channel n -FinFETs

  • Author

    Moonju Cho ; Roussel, Philippe ; Kaczer, Ben ; Degraeve, Robin ; Franco, Jacopo ; Aoulaiche, Marc ; Chiarella, T. ; Kauerauf, T. ; Horiguchi, Naoto ; Groeseneken, Guido

  • Author_Institution
    Interuniv. Microelectron. Center, Leuven, Belgium
  • Volume
    60
  • Issue
    12
  • fYear
    2013
  • fDate
    Dec. 2013
  • Firstpage
    4002
  • Lastpage
    4007
  • Abstract
    The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (VG ~ VD/2). At higher VG closer to VD, cold and hot carrier injection to the oxide bulk defect increases and dominates at the VG=VD stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to VG and highly at VG=VD, and this hot carrier injection into the oxide bulk defect is the main degradation mechanism.
  • Keywords
    MOSFET; hot carriers; impact ionisation; channel hot carrier degradation mechanisms; cold carrier injection; hot carrier injection; interface degradation; long channel devices; long-short channel n-FinFET; maximum impact ionization condition; oxide bulk defect; short channel devices; stress condition; Degradation; Hot carrier injection; Impact ionization; Logic gates; Stress; Temperature measurement; Charge trapping; FinFET; hot carrier; logic device; multigate FET;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2285245
  • Filename
    6634225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=54843