Title :
Weak emitter-size effect in InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As double heterojunction bipolar transistors
Author :
Che-An Chang ; Chen, Shu-Han ; Wang, Sheng-Yu ; Chang, Che-An ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
This study shows that the current gain of InGaAsSb base DHBTs is less sensitive to the emitter size and collector current density (JC) due to their low surface recombination. The deduced emitter periphery surface recombination current (KB,surf) of type-I InP/In0.37Ga0.63As0.89Sb0.11 HBTs is 1.57×10-5 μA/μm at JC = 0.1 A/cm2, which is twenty times lower than that of the conventional InP/InGaAs SHBTs. The results manifest the great potential of InGaAsSb base for aggressively scaled THz HBTs.
Keywords :
current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; size effect; surface recombination; InGaAsSb base DHBT; InP-In0.37Ga0.63As0.89Sb0.11-In0.53Ga0.47As; InP-In0.37Ga0.63As0.8Sb0.11-In0.53Ga 0.47 As double heterojunction bipolar transistors; collector current density; current gain; deduced emitter periphery; emitter size; low surface recombination; surface recombination current; type-I In0.37Ga0.63As0.89Sb0.11 HBTsconventional InP-InGaAs; weak emitter-size effect; Current density; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Junctions; Spontaneous emission;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
