Weak emitter-size effect in InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As double heterojunction bipolar transistors

Author

Che-An Chang ; Chen, Shu-Han ; Wang, Sheng-Yu ; Chang, Che-An ; Chyi, Jen-Inn

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

This study shows that the current gain of InGaAsSb base DHBTs is less sensitive to the emitter size and collector current density (J_C) due to their low surface recombination. The deduced emitter periphery surface recombination current (K_B,surf) of type-I InP/In_0.37Ga_0.63As_0.89Sb_0.11 HBTs is 1.57×10^-5 μA/μm at J_C = 0.1 A/cm², which is twenty times lower than that of the conventional InP/InGaAs SHBTs. The results manifest the great potential of InGaAsSb base for aggressively scaled THz HBTs.

Keywords

current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; size effect; surface recombination; InGaAsSb base DHBT; InP-In_0.37Ga_0.63As_0.89Sb_0.11-In_0.53Ga_0.47As; InP-In_0.37Ga_0.63As_0.8Sb_0.11-In_0.53Ga _0.47 As double heterojunction bipolar transistors; collector current density; current gain; deduced emitter periphery; emitter size; low surface recombination; surface recombination current; type-I In_0.37Ga_0.63As_0.89Sb_0.11 HBTsconventional InP-InGaAs; weak emitter-size effect; Current density; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Junctions; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978279