Noise properties of asymmetrically recessed InP-based HEMTs for low-noise amplifiers

Low-noise amplifiers (LNAs) need appropriate transistors to operate with high performance; i.e., the first-stage amplifier in the LNAs requires low-noise property, in particular, and the succeeding stages require high gain with high breakdown voltage. In this study, we proposed InP-base HEMTs with an asymmetric gate-recess structure for high-gain amplifiers with a low noise figure. A gate-drain spacing (L_rd) of around 100 nm in the gate-recess region was suitable for first-stage amplifiers. Furthermore, a large L_rd of 250 nm was suitable for obtaining high gain in the succeeding stages.