1550 nm flip-chip compatible electroabsorption-modulated laser with 40 Gb/s modulation capability

Author

Kreissl, Jochen ; Bornholdt, Carsten ; Gaertner, Tom ; Moerl, Ludwig ; Przyrembel, Georges ; Rehbein, Wolfgang

Author_Institution

Fraunhofer-Inst. fur Nachrichtentechnik, Heinrich-Hertz-Inst., Berlin, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

1.55μm electroabsorption-modulated laser (EML) devices designed for flip-chip mounting have been developed including a DFB laser, a butt joint coupled electroabsorption modulator (EAM), and a spot-size expander. Flip-chip mounting enables array-like arrangements of individually optimized discrete chips to be placed on optical PLC platforms like Silicon-on-Insulator (SOI) boards. The EMLs are based on the conventional InP/InGaAsP material system and rely on a buried heterostructure with Fe doped InP blocking. Large signal modulation at 25 Gb/s and 40Gb/s with high extinction ratio is demonstrated.

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; extinction coefficients; flip-chip devices; gallium arsenide; indium compounds; integrated optoelectronics; iron; optical design techniques; quantum well lasers; silicon-on-insulator; DFB laser; Fe:InP-InP-InGaAsP-Si; bit rate 25 Gbit/s; bit rate 40 Gbit/s; butt joint electroabsorption coupled modulator; electroabsorption-modulated laser; extinction ratio; flip-chip mounting; optical PLC platforms; silicon-on-insulator boards; spot size expander; wavelength 1550 nm; Current measurement; Erbium; Indium phosphide; Modulation; Optical device fabrication; Optical waveguides; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978283