DocumentCode
549290
Title
High repetition rate two-section InAs/InP quantum-dash passively mode locked lasers
Author
Rosales, R. ; Merghem, K. ; Martinez, A. ; Accard, A. ; Lelarge, F. ; Ramdane, A.
Author_Institution
CNRS Lab. for Photonics & Nanostruct., Marcoussis, France
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
4
Abstract
First observations of 2-section InAs/InP quantum-dash passive mode locking (ML) at fundamental repetition frequencies up to ~100 GHz are presented. The effects of gain/absorber section lengths and driving conditions on ML characteristics are systematically investigated.
Keywords
III-V semiconductors; indium compounds; laser mode locking; quantum dash lasers; InAs-InP; fundamental repetition frequencies; gain-absorber section lengths; two-section quantum-dash passively mode locked lasers; Cavity resonators; Indium phosphide; Laser mode locking; Quantum dot lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location
Berlin
Print_ISBN
978-1-4577-1753-6
Electronic_ISBN
978-3-8007-3356-9
Type
conf
Filename
5978285
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