Improvement of modal gain of InAs/InP quantum-dash lasers

Author

Merghem, K. ; Rosales, R. ; Martinez, A. ; Patriarche, G. ; Ramdane, A. ; Chimot, N. ; van Dijk, F. ; Moustapha-Rabault, Y. ; Poingt, F. ; Lelarge, F.

Author_Institution

Lab. for Photonics & Nanostruct., CNRS, Marcoussis, France

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

The optimization of modal gain in InAs/InP quantum-dash based lasers is reported in detail. Using either p-doped 6 dash-in-a-well or undoped 15 dash-in-a-well structures, we demonstrate modal gain up to 60cm^-1. This improvement induces an increase of differential gain and therefore leads to high resonance frequency (>;10GHz) and low linewidth enhancement factor (<;2.5). It opens the way to a further optimization of both quantum-dash stacking and p-doping as well as a proper combination of the two approaches.

Keywords

III-V semiconductors; indium compounds; optimisation; quantum dash lasers; semiconductor doping; spectral line breadth; InAs-InP; dash-in-a-well structures; linewidth enhancement factor; modal optical gain; optimization; p-doping; quantum-dash lasers; High speed optical techniques; Indium phosphide; Photonics; Quantum dot lasers; Stacking;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978290