Title :
Electrical pumping Febry-Perot lasing of III–V layer on highly doped silicon micro rib by plasma assisted direct bonding
Author :
Li, Linghan ; Takigawa, Ryo ; Higo, Akio ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
Abstract :
The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12°C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed.
Keywords :
Fabry-Perot resonators; III-V semiconductors; elemental semiconductors; gallium arsenide; heavily doped semiconductors; indium compounds; microcavity lasers; optical fabrication; optical pumping; plasma materials processing; quantum well lasers; semiconductor doping; semiconductor heterojunctions; semiconductor quantum wells; silicon; Fabry-Perot resonant cavity; III-V active layer; MQWs; Si-InGaAsP; direct current injection; direct-current-pumped Fabry-Perot lasing; heterojunctions; highly doped silicon microrib; optical properties; plasma assisted direct bonding; semiconductive properties; temperature 12 degC; Electron optics; Indium phosphide; Integrated optics; Optical buffering; Plasmas; Quantum well devices; Semiconductor lasers;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
