ALD Al2O3 activated direct wafer bonding for III–V CMOS photonics platform

Author

Ikku, Y. ; Yokoyama, M. ; Iida, R. ; Sugiyama, M. ; Nakano, Y. ; Takenaka, M. ; Takagi, S.

Author_Institution

Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

Atomic layer deposited Al₂O₃ activated direct wafer bonding has been developed to form III-V on Insulator wafer on Si for III-V CMOS photonics. The surface energy of the bonded interface was improved to be 620 mJ/m² without any plasma process. The propagation loss of an InGaAsP photonic wire waveguide was also improved to 1.7 dB/mm.

Keywords

CMOS integrated circuits; III-V semiconductors; aluminium compounds; atomic layer deposition; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; light propagation; optical losses; optical waveguides; silicon; silicon compounds; surface energy; wafer bonding; ALD; III-V CMOS photonics platform; InGaAsP-Al₂O₃-SiO₂-Si; activated direct wafer bonding; atomic layer deposition; photonic wire waveguide; propagation loss; surface energy; Annealing; Atomic layer deposition; Indium phosphide; Monitoring; Photonics; Plasma measurements; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978302