Title :
ALD Al2O3 activated direct wafer bonding for III–V CMOS photonics platform
Author :
Ikku, Y. ; Yokoyama, M. ; Iida, R. ; Sugiyama, M. ; Nakano, Y. ; Takenaka, M. ; Takagi, S.
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
Atomic layer deposited Al2O3 activated direct wafer bonding has been developed to form III-V on Insulator wafer on Si for III-V CMOS photonics. The surface energy of the bonded interface was improved to be 620 mJ/m2 without any plasma process. The propagation loss of an InGaAsP photonic wire waveguide was also improved to 1.7 dB/mm.
Keywords :
CMOS integrated circuits; III-V semiconductors; aluminium compounds; atomic layer deposition; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; light propagation; optical losses; optical waveguides; silicon; silicon compounds; surface energy; wafer bonding; ALD; III-V CMOS photonics platform; InGaAsP-Al2O3-SiO2-Si; activated direct wafer bonding; atomic layer deposition; photonic wire waveguide; propagation loss; surface energy; Annealing; Atomic layer deposition; Indium phosphide; Monitoring; Photonics; Plasma measurements; Semiconductor device measurement;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
