MOVPE growth and optical properties of wurtzite InP nanowires with radial InP/InAsP quantum wells

Author

Kawaguchi, Kenichi ; Heurlin, Magnus ; Lindgren, David ; Borgström, Magnus T. ; Samuelson, Lars

Author_Institution

Solid State Phys., Lund Univ., Lund, Sweden

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

MOVPE growth and optical properties of wurtzite (WZ) InP nanowires (NWs) with radial InAsP/InP quantum wells (QWs) were investigated. InAsP QWs with a pure WZ crystal phase structure were grown using pure WZ-InP NW cores with the crystalline structure controlled by sulphur doping. Single NWs showed photoluminescence attributed to the InAsP QW with WZ crystal phase structure, and peak energy shifts related to the QW width were observed.

Keywords

III-V semiconductors; MOCVD; arsenic compounds; crystal structure; indium compounds; nanofabrication; nanowires; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InAsP-InP; MOVPE; optical properties; peak energy shifts; photoluminescence; radial quantum wells; sulphur doping; wurtzite crystal phase structure; wurtzite nanowires; Crystals; Diffraction; Gold; Indium phosphide; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978309