Improvement of breakdown and DC-to-pulse dispersion properties in field-plated InGaAs-InAlAs pHEMTs

Author

Saguatti, Davide ; Isa, Muammar Mohamad ; Ka Wa Lan ; Chini, Alessandro ; Verzellesi, Giovanni ; Fantini, Fausto ; Missous, Mohamed

Author_Institution

DISMI, Univ. di Modena e Reggio Emilia, Modena, Italy

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

3

Abstract

We report on novel, high voltage InGaAs-InAlAs pHEMTs, which have been processed on an optimized epilayer and incorporate field-plate structures of different dimensions. Fabricated devices demonstrate great improvements in breakdown voltage and gate leakage, while keeping the same DC and RF behaviour with respect to baseline devices, i.e. with no field-plate implemented. In addition, the field plate strongly attenuates DC-to-pulse dispersion, making these devices suitable for high-power-density RF power amplifiers.

Keywords

III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; indium compounds; power HEMT; DC behaviour; DC-to-pulse dispersion properties; InGaAs-InAlAs; RF behaviour; breakdown properties; breakdown voltage; field-plate structures; field-plated InGaAs-InAlAs pHEMT; gate leakage; high voltage InGaAs-InAlAs pHEMT; high-power-density RF power amplifiers; optimized epilayer; Dispersion; Indium phosphide; Leakage current; Logic gates; PHEMTs; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978310