DocumentCode
549321
Title
Design improvements for InP-based 90°-hybrid OEICs for 100GE coherent frontends
Author
Kunkel, R. ; Bach, H.-G. ; Zhang, R. ; Hoffmann, D. ; Schmidt, D. ; Schell, M. ; Ortega-Moñux, A. ; Romero-García, S. ; Molina-Fernandez, I. ; Halir, R.
Author_Institution
HHI, Fraunhofer Inst. for Telecommun., Berlin, Germany
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
4
Abstract
A monolithically integrated InP 90°hybrid OEIC incorporating waveguides with different etch depths connected by newly designed tapers is presented.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical receivers; optical waveguides; quadrature phase shift keying; InP-InGaAsP; coherent frontends; etch depths; monolithically integrated hybrid OEIC; optoelectronic integrated circuit; tapers; waveguides; Indium phosphide; Layout; Optical receivers; Optical waveguides; Photodiodes; 100GbE; Optical 90° hybrid; fiber optic links; integrated photodiode;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location
Berlin
Print_ISBN
978-1-4577-1753-6
Electronic_ISBN
978-3-8007-3356-9
Type
conf
Filename
5978321
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