Title :
High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor
Author :
Yatskiv, R. ; Grym, J. ; Zdansky, K. ; Piksova, K.
Author_Institution :
Inst. of Photonics & Electron., Acad. of Sci. of the Czech Republic, Prague, Czech Republic
Abstract :
Hydrogen sensing characteristics of graphite-Pd(Pt)/InP Schottky diodes fabricated by electrophoretic deposition technique were investigated. The proposed hydrogen sensors showed relatively high sensitivity response of ~106 to 1000 ppm H2 in N2. The barrier height reduction due to hydrogen exposure was 0.35 eV and 0.37 eV for Pd and Pt based Schottky diodes respectively. Temperature dependence of the sensitivity, the barrier height variation, the ideality factor and the barrier height itself were studied. Pt based Schottky diodes show better sensitivity and shorter recovery times compared to Pd ones.
Keywords :
III-V semiconductors; MIS devices; Schottky diodes; electrodeposition; electrophoresis; gas sensors; graphite; indium compounds; nanoparticles; nanosensors; palladium; platinum; C-Pd-InP; C-Pt-InP; barrier height reduction; electrophoretic deposition; high sensitivity graphite nanoparticle Schottky diode hydrogen sensor; ideality factor; temperature dependence; Capacitance-voltage characteristics; Electrodes; Electrostatic discharge; Indium phosphide; Temperature;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
