Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction

Author

Nardmann, Tobias ; Lehmann, Steffen ; Schröter, Michael ; Driad, Rachid

Author_Institution

Dept. of Electr. Dev. & Integrated Circuits, Dresden Univ. of Technol., Dresden, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

The suitability of the compact model HICUM for modeling III-V HBTs is evaluated. For this purpose, a complete parameter extraction for HICUM/L0 is performed using single-transistor extraction routines. The suitability of some of these methods is discussed and the best available ones are identified. Model results are presented and compared with measurements. Good agreement is obtained demonstrating the fundamental suitability of HICUM for InP DHBTs and supporting the deployment of this technology.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device models; DHBT; III-V HBT modeling; InP; compact model HICUM/L0; single-transistor extraction routines; single-transistor parameter extraction; Current measurement; Electrical resistance measurement; Indium phosphide; Integrated circuit modeling; Resistance; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978325