Title :
Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction
Author :
Nardmann, Tobias ; Lehmann, Steffen ; Schröter, Michael ; Driad, Rachid
Author_Institution :
Dept. of Electr. Dev. & Integrated Circuits, Dresden Univ. of Technol., Dresden, Germany
Abstract :
The suitability of the compact model HICUM for modeling III-V HBTs is evaluated. For this purpose, a complete parameter extraction for HICUM/L0 is performed using single-transistor extraction routines. The suitability of some of these methods is discussed and the best available ones are identified. Model results are presented and compared with measurements. Good agreement is obtained demonstrating the fundamental suitability of HICUM for InP DHBTs and supporting the deployment of this technology.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device models; DHBT; III-V HBT modeling; InP; compact model HICUM/L0; single-transistor extraction routines; single-transistor parameter extraction; Current measurement; Electrical resistance measurement; Indium phosphide; Integrated circuit modeling; Resistance; Temperature measurement;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
