Heteroepitaxial bonding of GalnAs quantum wells on Si: A new approach towards photonic integration on Si for devices operating at 1.55 µm

Author

Talneau, A. ; Chouteau, D. ; Mauguin, O. ; Largeau, L. ; Sagnes, I. ; Patriarche, G.

Author_Institution

Lab. de Photonique et de Nanostruct., Marcoussis, France

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

3

Abstract

Heteroepitaxial bonding of III-V materials, mainly InP on Si, without any intermediate dielectric layer, shall allow 1 55μm operating devices to be designed including nano-structuration for tailored spectral operation and no thermal limitation of performances. Bonded surfaces should be limited to the areas of active devices only. Preliminary results evidence the successful bonding of InGaAs quantum wells on Si.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated circuit bonding; integrated optics; nanophotonics; optical design techniques; semiconductor epitaxial layers; semiconductor quantum wells; GaInAs; III-V materials; InP; Si; bonded surfaces; heteroepitaxial bonding; intermediate dielectric layer; nanostructuration; photonic integration; quantum wells; wavelength 1.55 mum; Indium phosphide;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978328