Title :
High-speed and low-power static frequency divider and decision circuit with 0.5-µm-emitter-width InP HBTs
Author :
Bouvier, Y. ; Nagatani, M. ; Sano, K. ; Murata, K. ; Kurishima, K. ; Ida, M.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
A static frequency divider and decision circuit have been designed and fabricated in a 290-GHz-fT InP HBT technology. The static frequency divider operates up to 70 GHz with core power consumption as low as 19.6 mW. The decision circuit, realized with a parallel-clock structure, achieves error-free operation up to 50 Gbps with power consumption of 142 mW. Both speed/power ratios are among the highest in over-50-GHz applications. These results demonstrate the suitability of this technology for high-speed and low-power applications.
Keywords :
III-V semiconductors; decision circuits; frequency dividers; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; low-power electronics; HBT; InP; decision circuit; error-free operation; frequency 290 GHz; high-speed static frequency divider; low-power static frequency divider; parallel-clock structure; power 142 mW; size 0.5 mum; speed-power ratios; Frequency conversion; Frequency measurement; Indium phosphide; Integrated circuits; Power demand; Time measurement;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
