• DocumentCode
    549333
  • Title

    Strain effects on performance of AlGalnAs/InP single quantum well lasers

  • Author

    Sapkota, Durga Prasad ; Kayastha, Madhu Sudan ; Wakita, Koichi

  • Author_Institution
    Chubu Univ., Kasugai, Japan
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have studied the effects of compressive and tensile strain of single quantum well lasers on differential gain, transparency carriers density and threshold current density. Aluminum composition is adjusted at 0.07 and 0.09 for compressive and tensile strain respectively. In both compressive and tensile strain quantum well, the minimum threshold current density was achieved at 1.5% strain as 110 Acm-2 and 125 Acm-2 respectively, with a cavity length of 400 μm.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; current density; gallium compounds; indium compounds; internal stresses; quantum well lasers; AlGaInAs-InP; aluminum composition; compressive strain; differential gain; single quantum well lasers; tensile strain; threshold current density; transparency carriers density; Indium phosphide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4577-1753-6
  • Electronic_ISBN
    978-3-8007-3356-9
  • Type

    conf

  • Filename
    5978333
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549333