• DocumentCode
    549336
  • Title

    Extended X-ray absorption fine structure of InAsPSb

  • Author

    Wu, Chen-Jun ; Tsai, Gene ; Feng, Zhe-Chuan ; Lin, Hao-Hsiung

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    InAsPSb is a quaternary of great importance because it can be lattice-matched to InAs and with an energy gap covering mid-infrared spectral range. This alloy, however, suffers from immiscibility problems when its As composition is lower than 0.4. According to the valence force field (VFF) model, bond lengths in an alloy resemble those in corresponding end-point binaries. Because of the large difference between the In-P and In-Sb bond length, the concomitant incorporation of P and Sb in InAsPSb could be energetically unfavourable, leading to phase separation during the growth. For the time being, short range atomic arrangement in this alloy is still lack of study. In this work, we use extended X-ray absorption fine structure (EXAFS) to study the bond lengths and short range structures in InAsPSb alloys with different compositions.
  • Keywords
    EXAFS; III-V semiconductors; arsenic compounds; bond lengths; indium compounds; phosphorus compounds; semiconductor thin films; EXAFS; InAsPSb; bond lengths; extended X-ray absorption fine structure; short range structures; valence force field model; Absorption; Fitting; Gallium arsenide; Indium phosphide; Metals; Oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4577-1753-6
  • Electronic_ISBN
    978-3-8007-3356-9
  • Type

    conf

  • Filename
    5978337