DocumentCode :
549336
Title :
Extended X-ray absorption fine structure of InAsPSb
Author :
Wu, Chen-Jun ; Tsai, Gene ; Feng, Zhe-Chuan ; Lin, Hao-Hsiung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
InAsPSb is a quaternary of great importance because it can be lattice-matched to InAs and with an energy gap covering mid-infrared spectral range. This alloy, however, suffers from immiscibility problems when its As composition is lower than 0.4. According to the valence force field (VFF) model, bond lengths in an alloy resemble those in corresponding end-point binaries. Because of the large difference between the In-P and In-Sb bond length, the concomitant incorporation of P and Sb in InAsPSb could be energetically unfavourable, leading to phase separation during the growth. For the time being, short range atomic arrangement in this alloy is still lack of study. In this work, we use extended X-ray absorption fine structure (EXAFS) to study the bond lengths and short range structures in InAsPSb alloys with different compositions.
Keywords :
EXAFS; III-V semiconductors; arsenic compounds; bond lengths; indium compounds; phosphorus compounds; semiconductor thin films; EXAFS; InAsPSb; bond lengths; extended X-ray absorption fine structure; short range structures; valence force field model; Absorption; Fitting; Gallium arsenide; Indium phosphide; Metals; Oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
Type :
conf
Filename :
5978337
Link To Document :
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