Title :
InP lattice-matched HEMT with regrown Source/Drain by MOCVD
Author :
Li, Qiang ; Li, Ming ; Tang, Chak Wah ; Lau, Kei May
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
In this paper, we report the incorporation of Source/Drain regrowth by MOCVD in InAlAs/InGaAs HEMT on InP substrate. Greatly improved RF performance of the device was observed, compared with standard HEMTs with the same layered structure. 1-μm gate-length device exhibits a 34% improvement of cutoff frequency fT and a 74% improvement of maximum oscillation frequency fmax.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; InAlAs-InGaAs; InP; MOCVD; RF performance; cutoff frequency; lattice-matched HEMT; layered structure; maximum oscillation frequency; source-drain regrowth; HEMTs; Indium gallium arsenide; Indium phosphide; Logic gates; Silicon;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
