• DocumentCode
    549338
  • Title

    InP lattice-matched HEMT with regrown Source/Drain by MOCVD

  • Author

    Li, Qiang ; Li, Ming ; Tang, Chak Wah ; Lau, Kei May

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we report the incorporation of Source/Drain regrowth by MOCVD in InAlAs/InGaAs HEMT on InP substrate. Greatly improved RF performance of the device was observed, compared with standard HEMTs with the same layered structure. 1-μm gate-length device exhibits a 34% improvement of cutoff frequency fT and a 74% improvement of maximum oscillation frequency fmax.
  • Keywords
    III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; InAlAs-InGaAs; InP; MOCVD; RF performance; cutoff frequency; lattice-matched HEMT; layered structure; maximum oscillation frequency; source-drain regrowth; HEMTs; Indium gallium arsenide; Indium phosphide; Logic gates; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4577-1753-6
  • Electronic_ISBN
    978-3-8007-3356-9
  • Type

    conf

  • Filename
    5978339
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549338