DocumentCode
549345
Title
Nanostructuring of InP by colloidal lithography and ICP etching for photovoltaic applications
Author
Naureen, Shagufta ; Rajagembu, Perumal ; Sanatinia, Reza ; Shahid, Naeem ; Li, Mingyu ; Anand, Srinivasan
Author_Institution
Sch. of Inf. & Commun. Technol., R. Inst. of Technol., Kista, Sweden
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
4
Abstract
We demonstrate a simple and cost effective method to fabricate InP nanopillars using silica particles as masks for etching InP. Oxygen plasma treatment of InP surfaces before dispersion of colloidal mask particles improved surface wettability significantly and helped in uniform coverage of the particles over large areas. Pillars with varied sizes were fabricated by dispersing colloidal SiO2 with different sizes on the sample and/or by reducing size of particles after dispersion. Nanopillars with different heights and shapes from near cylindrical to conical were obtained by varying etch process parameters and by progressive erosion of colloidal SiO2 particle (mask). Pillars with aspect ratios in excess of 15:1 have been obtained. Investigations are also made on regular close packed hexagonal structures with wide area coverage. Size reduction of colloidal particles after dispersion is used to overcome the lag effect observed in the etching of close packed structures. The demonstrated nanostructuring method is attractive for producing photonic crystals and antireflecting surfaces in solar cells.
Keywords
III-V semiconductors; corrosion; indium compounds; nanofabrication; nanolithography; nanoparticles; particle size; plasma materials processing; sputter etching; wear; wetting; ICP etching; InP; antireflecting surfaces; colloidal lithography; colloidal mask particles; nanopillars; nanostructuring method; oxygen plasma treatment; particle size; photonic crystals; photovoltaic applications; progressive erosion; regular close packed hexagonal structures; silica particles; solar cells; surface wettability; Dispersion; Etching; Indium phosphide; Iterative closest point algorithm; Plasmas; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location
Berlin
Print_ISBN
978-1-4577-1753-6
Electronic_ISBN
978-3-8007-3356-9
Type
conf
Filename
5978347
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