Atomic ordering and decomposition of lattice matched InxGa1−xAsyP1−y on InP(001)

Author

Lenz, Andrea ; Eisele, Holger ; Genz, Florian ; Franke, Dieter ; Künzel, Harald ; Pohl, Udo W. ; Dähne, Mario

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Berlin, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

Atomic ordering and decomposition of In_xGa_1-xAs_yP_1-y grown lattice matched on InP(001) is investigated with cross-sectional scanning tunnelling microscopy. The atomic composition of the quaternary material is analyzed at both the (110) and (110) cleavage surfaces, yielding two different decomposition effects on different length scales: a formation of columnar structures with widths amounting to some tens of nm and a CuPt-like ordering on the atomic scale.

Keywords

III-V semiconductors; decomposition; gallium arsenide; indium compounds; nanostructured materials; scanning tunnelling microscopy; semiconductor quantum dots; (110) cleavage surface; In_xGa_1-xAs_yP_1-y; InP; InP(001) surface; atomic composition ordering; columnar structures; cross-sectional scanning tunnelling microscopy; lattice matched decomposition; nanostructured materials; quantum dots; quaternary material; Indium phosphide; Matrix decomposition; Metals; Microscopy; Nanostructures; Transmission line matrix methods;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978353