Title :
Waveguide AlInAs/GaInAs APD for 40Gb/s optical receivers
Author :
Lahrichi, M. ; Glastre, G. ; Paret, J-F ; Carpentier, D. ; Lanteri, D. ; Lagay, N. ; Decobert, J. ; Achouche, M.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
We show an evanescent waveguide coupling AlInAs/InGaAs SAGM APD using a short multimode waveguide for 40Gb/s optical transmission. Very thin avalanche and absorption layers together with a well optimized diluted waveguide allow achieving simultaneously a broad bandwidth (>; 26GHz for multiplication factors up to M=7-8) and a high responsivity of Rmax = 13.4 A/W at 1.55μm.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; integrated optics; optical couplers; optical receivers; optical waveguides; AlInAs-InGaAs; absorption layers; bit rate 40 Gbit/s; evanescent waveguide coupling; optical receivers; responsivity; separated absorption grading and multiplication; short multimode waveguide; wavelength 1.55 mum; Absorption; Avalanche photodiodes; Bandwidth; Couplings; Dark current; Frequency measurement; Optical waveguides;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
