Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications

Author

Zhao, Huan ; Do, Thanh Ngoc Thi ; Sobis, Peter ; Tang, Aik-Yean ; Yhland, Klas ; Stenarson, Jörgen ; Stake, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

4

Abstract

In this paper we describe the fabrication and characterization of thin film resistors and capacitors integrated on a 3 μm thick GaAs membrane. The thin film resistors and capacitors are based on NiCr and SiN_x materials respectively. On-wafer probing DC characterization of these thin film components was performed before removing the GaAs substrate. The corresponding high frequency characterization in the WR-03 frequency band (220-325 GHz) was demonstrated utilizing a membrane-based two-port TRL calibration technique. The measurement results have shown a good agreement with the simulation.

Keywords

capacitors; chromium alloys; membranes; millimetre wave circuits; nickel alloys; silicon compounds; submillimetre wave circuits; thin film resistors; GaAs; GaAs substrate; NiCr; SiN_x; capacitors; frequency 220 GHz to 325 GHz; membranes; on-wafer probing DC characterization; size 3 mum; submillimeter wave circuit applications; thin film resistors; Capacitors; Gallium arsenide; Gold; Microwave filters; Resistors; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978368