Title :
InP HBTs for THz frequency integrated circuits
Author :
Urteaga, M. ; Seo, M. ; Hacker, J. ; Griffith, Z. ; Young, A. ; Pierson, R. ; Rowell, P. ; Skalare, A. ; Jain, V. ; Lobisser, E. ; Rodwell, M.J.W.
Author_Institution :
Teledyne Sci. Co., Thousand Oaks, CA, USA
Abstract :
A 0.25μm InP DHBT process has been developed for THz frequency integrated circuits. A 0.25×4μm2 HBT exhibits an extrapolated ft/fmax of 430GHz/1.03THz at IC=11mA, VCE=1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BVCEO)>;4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build fundamental oscillators, amplifiers and dynamic frequency dividers all operating at >;300GHz. Additionally, increasingly complex circuits such as a full PLL have been demonstrated.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit interconnections; phase locked loops; semiconductor device breakdown; semiconductor thin films; submillimetre wave integrated circuits; HBT; InP; PLL; THz frequency integrated circuits; backside wafer processes; common-emitter breakdown voltage; size 0.25 mum; thin-film interconnects; Current measurement; Heterojunction bipolar transistors; Indium phosphide; Integrated circuits; Semiconductor device measurement; Wiring;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
