DocumentCode :
549382
Title :
Hybrid integration of InP devices
Author :
Maxwell, Graeme
Author_Institution :
Centre for Integrated Photonics (CIP) Ltd., UK
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
1
Abstract :
Higher levels of optical integration are essential for next generation higher capacity systems. The requirements of higher capacity, lower footprint and reduced cost all lead to the need to integrate. However, this integration must be achieved without loss of performance. Hybrid integration is a key enabler in achieving these objectives. This paper describes one approach for hybrid integration where the best in class device technologies for actives and passives are integrated to produce a multiplicity of integrated devices using the same basic building blocks.
Keywords :
III-V semiconductors; hybrid integrated circuits; indium compounds; integrated circuit modelling; integrated circuit technology; integrated optics; InP; hybrid integration; next generation higher capacity systems; optical integration; performance loss; Facsimile; Indium phosphide; Next generation networking; Optical devices; Optical losses; Performance evaluation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
Type :
conf
Filename :
5978387
Link To Document :
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