DocumentCode
549383
Title
InP HBT technology activities in Europe
Author
Konczykowska, Agnieszka
Author_Institution
III-V Lab., Alcatel-Thales, Marcoussis, France
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
4
Abstract
This overview presents activities in the field of InP HBT in Europe. In the first part, technological work of different groups with their particularities and recent results are presented. The second part is devoted to show some integrated circuit design and measurement results, illustrating application domains for which InP HBT process is particularly suitable.
Keywords
III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit measurement; HBT; InP; integrated circuit design; DH-HEMTs; Europe; Heterojunction bipolar transistors; Indium phosphide; Optical variables measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location
Berlin
Print_ISBN
978-1-4577-1753-6
Electronic_ISBN
978-3-8007-3356-9
Type
conf
Filename
5978388
Link To Document