Title :
High speed InP/InGaAs uni-traveling-carrier photodiodes with dipole-doped InGaAs/InP absorber-collector interface
Author :
Wang, H. ; Mao, S.
Author_Institution :
Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
For uni-traveling carrier photodiodes (UTC-PDs) using InGaAs and InP as the absorber and collector, an abrupt heterojunction at the absorber-collector interface may induce a large degradation of current handling and microwave performance caused by the current blocking effect. In this work, UTC-PDs with dipole doping at the InGaAs/InP interface to suppress the current blocking are demonstrated. By using a dipole-doped InGaAs/InP interface, the use of InGaAsP quaternary for the interface is eliminated, which eases both material growth and device fabrication.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; microwave photonics; optical fabrication; photodiodes; semiconductor doping; semiconductor heterojunctions; InGaAs-InP; abrupt heterojunction; current blocking effect; device fabrication; dipole-doped absorber-collector interface; high-speed unitraveling carrier photodiodes; microwave performance; Current measurement; Doping; Fabrication; Indium gallium arsenide; Indium phosphide; Photodiodes;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
