Modeling of InAs(001) growth by molecular beam epitaxy

Author

Khachab, H. ; Abdelkafi, Y. ; Belghachi, A.

Author_Institution

Lab. of Semicond. Devices Phys., Univ. of Bechar, Béchar, Algeria

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

2

Abstract

The kinetics of semiconductors growth by molecular beam epitaxy (MBE) has been the subject of a number of studies involving the growth of III-V materiels. The InAs (001) surface is one of the most studied semiconductor surfaces and has attracted much interest of both experimentalists and theoreticians because of its importance for the growth of multilayer devices structures. In this paper, the atomic structure of the α2 (2x4) of InAs surface reconstruction is determined using kinetic monte carlo (KMC) method. Then we discus results of the homoepitaxy InAs on InAs particularly morphological evolution of the two dimensional islands, rate coverage and roughness surface.

Keywords

III-V semiconductors; Monte Carlo methods; indium compounds; molecular beam epitaxial growth; reaction kinetics theory; semiconductor epitaxial layers; semiconductor growth; surface morphology; surface reconstruction; surface roughness; (001) surface; III-V materiels; InAs; atomic structure; homoepitaxy; kinetic Monte Carlo method; molecular beam epitaxy; morphological evolution; multilayer devices structures; rate coverage; semiconductor growth; semiconductor surfaces; surface reconstruction; surface roughness; two-dimensional islands; Kinetic theory; Molecular beam epitaxial growth; Monte Carlo methods; Rough surfaces; Surface morphology; Surface reconstruction; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978396