• DocumentCode
    549566
  • Title

    Statistical characterization of standard cells using design of experiments with response surface modeling

  • Author

    Miranda, Miguel ; Roussel, Philippe ; Brusamarello, Lucas ; Wirth, Gilson

  • Author_Institution
    Process Technol. Div., Imec, Leuven, Belgium
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    77
  • Lastpage
    82
  • Abstract
    This paper presents an approach for statistical characterization of standard cells based on a combination of Statistical Design of Experiments (S-DoE) and Response Surface Modeling. Unlike both, most of the State-of-the-Art and Sensitivity Analysis (SA) techniques currently offered by EDA vendors, S-DoE preserves the underlying correlation among process variation parameters. This results in about two orders of magnitude of statistical accuracy improvement, yet it features an electrical simulation effort linear to the cell complexity. The technique is validated using a representative subset of standard cells using a 32nm statistical Physical Design Kit.
  • Keywords
    CMOS integrated circuits; VLSI; design of experiments; response surface methodology; sensitivity analysis; cell complexity; response surface modeling; sensitivity analysis techniques; standard cell statistical characterization; statistical design of experiments; statistical physical design kit; Accuracy; Correlation; Covariance matrix; Integrated circuit modeling; Libraries; Predictive models; US Department of Energy; DoE; Response Modeling; Statistical Standard Cell Analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE
  • Conference_Location
    New York, NY
  • ISSN
    0738-100x
  • Print_ISBN
    978-1-4503-0636-2
  • Type

    conf

  • Filename
    5981922