• DocumentCode
    549608
  • Title

    Leakage-aware redundancy for reliable sub-threshold memories

  • Author

    Kim, Seokjoong ; Guthaus, Matthew

  • Author_Institution
    Univ. of California Santa Cruz, Santa Cruz, CA, USA
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    435
  • Lastpage
    440
  • Abstract
    In this work, we are the first to consider the optimization of sub-threshold stand-by VDD while simultaneously considering memory yield and redundant row/column usage. We propose a fast, optimal fault-repair analysis framework that is 200-600% faster than previous works and show that leakage can be reduced 10-14% using redundancy without sacrificing yield.
  • Keywords
    integrated circuit yield; integrated memory circuits; optimisation; redundancy; leakage-aware redundancy; memory yield; optimal fault-repair analysis; optimization; reliable sub-threshold memories; row/column usage; Arrays; Circuit faults; Maintenance engineering; Manufacturing; Random access memory; Redundancy; Sub-threshold SRAM; leakage; redundancy; yield enhancement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE
  • Conference_Location
    New York, NY
  • ISSN
    0738-100x
  • Print_ISBN
    978-1-4503-0636-2
  • Type

    conf

  • Filename
    5981964
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=549608