• DocumentCode
    549612
  • Title

    Circuit design challenges at the 14nm technology node

  • Author

    Warnock, James

  • Author_Institution
    IBM Syst. & Technol. Group, T.J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2011
  • fDate
    5-9 June 2011
  • Firstpage
    464
  • Lastpage
    467
  • Abstract
    Technology scaling non-idealities, already apparent in the transitions between previous technology generations, will become even more pronounced as the world moves from the 22nm node to the 14nm node. Digital logic designers working on high-performance microprocessors and similar projects will face significant new challenges as the basic FET structure is changed in a fundamental way, in order to squeeze more performance from scaled devices. New design constraints and new sources of variability will have to be understood, and new methodologies will be required to enable robust, high-speed designs. In addition, the metal interconnects between devices will also be stressed. Scaled wire RC will likely increase, and new tools and methods will be needed to ensure reliable designs.
  • Keywords
    digital integrated circuits; integrated circuit design; integrated circuit reliability; circuit design; digital logic design; metal interconnects; technology scaling non-idealities; CMOS integrated circuits; FinFETs; Integrated circuit reliability; Logic gates; Reliability engineering; Wires; 14nm silicon technology; CMOS scaling; VLSI Circuit design; digital circuit design trends; fully depleted SOI; future CMOS design trends; future microprocessor designs; interconnect reliability; metal interconnect scaling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE
  • Conference_Location
    New York, NY
  • ISSN
    0738-100x
  • Print_ISBN
    978-1-4503-0636-2
  • Type

    conf

  • Filename
    5981968