DocumentCode
549612
Title
Circuit design challenges at the 14nm technology node
Author
Warnock, James
Author_Institution
IBM Syst. & Technol. Group, T.J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2011
fDate
5-9 June 2011
Firstpage
464
Lastpage
467
Abstract
Technology scaling non-idealities, already apparent in the transitions between previous technology generations, will become even more pronounced as the world moves from the 22nm node to the 14nm node. Digital logic designers working on high-performance microprocessors and similar projects will face significant new challenges as the basic FET structure is changed in a fundamental way, in order to squeeze more performance from scaled devices. New design constraints and new sources of variability will have to be understood, and new methodologies will be required to enable robust, high-speed designs. In addition, the metal interconnects between devices will also be stressed. Scaled wire RC will likely increase, and new tools and methods will be needed to ensure reliable designs.
Keywords
digital integrated circuits; integrated circuit design; integrated circuit reliability; circuit design; digital logic design; metal interconnects; technology scaling non-idealities; CMOS integrated circuits; FinFETs; Integrated circuit reliability; Logic gates; Reliability engineering; Wires; 14nm silicon technology; CMOS scaling; VLSI Circuit design; digital circuit design trends; fully depleted SOI; future CMOS design trends; future microprocessor designs; interconnect reliability; metal interconnect scaling;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (DAC), 2011 48th ACM/EDAC/IEEE
Conference_Location
New York, NY
ISSN
0738-100x
Print_ISBN
978-1-4503-0636-2
Type
conf
Filename
5981968
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